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| 2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications * * * High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 100 80 50 7 3.0 5.0 300 1.0 2.5 150 -55 to 150 Unit V V V A mA W C C JEDEC JEITA TOSHIBA SC-62 2-5K1A Weight: 0.05 g (typ.) Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.3 A VCE = 2 V, IC = 1 A IC = 1 A, IB = 20 mA IC = 1 A, IB = 20 mA VCB = 10 V, IE = 0, f = 1 MHz See Figure 1 circuit diagram. VCC 30 V, RL = 30 - IB1 = -IB2 = 33.3 mA Min 50 400 200 Typ. 13 40 500 120 Max 100 100 1000 0.14 1.10 ns V V pF Unit nA nA V 1 2006-07-26 2SC5712 Marking VCC 20 s RL IB1 IB1 Output Part No. (or abbreviation code) Input IB2 2 Lot No. A A line indicates lead (Pb)-free package or lead (Pb)-free finish. IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart 2 2006-07-26 2SC5712 IC - VCE 4 Common emitter Ta = 25C Single nonrepetitive pulse 40 30 2 20 10 5 1 2 IB = 1 mA 0 0 0.2 0.4 0.6 0.8 1 10 0.001 10000 Common emitter VCE = 2 V Single nonrepetitive pulse hFE - IC IC (A) 3 hFE 70 60 50 1000 25 Ta = 100C Collector current DC current gain -55 100 0.01 0.1 1 Collector current IC (A) Collector-emitter voltage VCE (V) VCE (sat) - IC 1 VBE (sat) - IC 100 Common emitter IC/IB = 50 Single nonrepetitive pulse Collector-emitter saturation voltage VCE (sat) (V) 0.1 Ta = 100C 25 Base-emitter saturation voltage VBE (sat) (V) Common emitter = 50 Single nonrepetitive pulse 10 -55 25 1 -55 Ta = 100C 0.01 0.001 0.001 0.01 0.1 1 0.1 0.001 0.01 0.1 1 Collector current IC (A) Collector current IC (A) VBE - IC 3 Common emitter VCE = 2 V Single nonrepetitive pulse 2 Base-emitter voltage VBE (V) Ta = 100C 1 25 -55 0 0 0.4 0.8 1.2 1.6 Collector current IC (A) 3 2006-07-26 2SC5712 rth - tw 1000 Transient thermal resistance rth (C/W) 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 10 IC max (pulsed) 10 ms 1 ms 100 s IC max (continuous) 10 s* 10 s IC (A) 100 ms* 1 DC operation * (Ta = 25C) : Single nonrepetitive pulse Ta = 25C 0.1 Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren't mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 Collector current 10 VCEO max 100 Collector-emitter voltage VCE (V) 4 2006-07-26 2SC5712 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 021023_D 060116EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. 021023_A * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. 021023_B * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C 5 2006-07-26 |
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